The new device is suitable for commercial and military, ground and airborne, secondary surveillance radar, and anti-collision air traffic control equipment
A leading supplier of power management, safe, reliable and high-performance semiconductor technology products, Microsemi CorporaTIon (NASDAQ: MSCC) has launched a new 750W RF transistor to expand its silicon carbide Carbide (SiC) substrate gallium nitride (GaN) high electron mobility transistor (HEMT) technology of radio frequency (radio frequency, RF) power transistor series. Among the full range of air traffic control and collision avoidance equipment, MDSGN-750ELMV provides outstanding maximum power performance. Target applications include commercial secondary surveillance radar (SSR), which is used throughout the world for aircraft interrogation and identification in airport areas and regional centers within a range of approximately 200 miles.
David Hall, Vice President and General Manager of RF Integrated Solutions at MGM, said: "As a leader in RF solutions, MGM ’s reputation is based on 30 years of experience, an outstanding engineering team, and a focus on providing breakthrough performance And new products with limited reliability. From components to components and custom packaging, we will continue to invest in the technology and equipment needed to further consolidate our leading position and provide better services to our customers. "
When operating at 1030 / 1090MHz, the MDSGN-750ELMV provides unparalleled 750 W peak power and 17 decibel (dB) power gain and typical 70% drain efficiency performance, the largest of such single-ended devices covering this frequency band The power.
In addition, for both the 1030MHz terrestrial interrogator and the 1090MHz airborne transponder, the new RF device can cope with the stringent commercial S-mode (Mode-S) Extended Length Message (ELM) pulse conditions and can be used For high-performance ground output stage. ELM makes air travel safer by promoting the sharing of weather and aircraft air traffic situation awareness information in regional venues. It is also an ideal choice in commercial air-to-air traffic warning and collision avoidance systems (TCAS) and enemy identification systems (IdenTIfy Friend or Foe, IFF) systems. Necessary to protect aircraft in the area.
Key technical characteristics:
· ELM pulse format-pulse number 48 pulses: 32 us (on) / 18 us (off)
Pulse repetition period: 24 ms
Long-term duty cycle: 6.4%
· Excellent output power: 750 W
· High power gain:> 17.2 dB minimum
· Excellent drain efficiency: 70% drain efficiency
· Drain bias voltage-Vdd: +50 V
· Breakdown voltage (BVdss)> 200V
· Low thermal resistance: 0.24 ℃ / W
· -40 to + 85 ° C power output temperature stability: <± 0.7 dB
GaN on SIC HEMT devices have several advantages over alternative process technologies, including higher power performance, material cost savings (BOM) costs, and reduced device footprint. For example, MDSGN-750ELMV has the following advantages:
· Single-ended design uses simplified impedance matching to replace low-power devices that require additional levels of combination.
· The highest peak power and power gain simplifies the number of system power stages and the number of final stage combinations
· Single-ended output stage pair provides 1.5 kW peak output power with margin
· Four output stages combined to provide a system-wide peak output power of> 5 kW
· 50V bias allows the use of existing power rails, reducing DC current requirements
· Extremely robust performance improves system yield
· Compared with silicon bipolar junction transistors (Si BJT) or laterally diffused metal oxide semiconductor (LDMOS) devices, the size of the amplifier is reduced by 50%
· Breakdown voltage dynamic margin is much larger than silicon bipolar and silicon LDMOS devices, and operates at a higher junction temperature to provide more robust operation and longer MTTF.
· Excellent temperature stability in the range of -55 to + 85 ° C
In addition to RF components, MGM ’s commercial aviation product portfolio includes: FPGAs, TVS diodes, integrated standard and custom products, integrated circuits, power conditioning and management components and modules, application specific integrated circuits (ASICs), microwave devices and components, and high-density memory Products, customized semiconductor packaging and integrated power distribution systems.
Packaging and supply
Microsemi provides single-ended package MDSGN-750ELMV, which is manufactured with 100% high temperature gold plating (Au) and seals the wires in the solder seal package, which has long-term reliability. Microsemi can provide loanable demo units for qualified customers and technical data sheets on the company's website. For more information, please send an email to sales. Please indicate "GAN RF" in the title bar.
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