GaN (gallium nitride)
A compound semiconductor composed of gallium (Ga) and nitrogen (N). The band gap is 3.45 eV (corresponding to about 365 nm in terms of wavelength of light) and is three times wider than silicon (Si). With this property, GaN is mainly used for optical components. By adjusting the band gap by mixing indium (In) and aluminum (Al), light-emitting elements such as LEDs and blue-violet semiconductor lasers have been put into practical use.
Due to the wide band gap, GaN can produce light of shorter wavelengths such as blue and green. Blue LEDs and blue-violet semiconductor lasers use InGaN formed by adding In to GaN. In addition to a wide band gap, GaN also has excellent properties of semiconductor materials such as high dielectric breakdown, fast electric field saturation, and high thermal conductivity. Further, a GaN-based semiconductor device having a HEMT (High Electron Mobility Transistor) structure has a high carrier mobility and is suitable as a high-frequency device. The reason is that there is a field of high-speed electronic flow called "two-dimensional electron gas layer". Moreover, since the dielectric field is larger than Si and GaAs, the withstand voltage is higher and a higher voltage can be applied. Therefore, when a GaN-based HEMT is used in a high-frequency power amplifier circuit such as a mobile phone base station, power addition efficiency can be improved and power consumption can be reduced.
Recently, GaN is also expected as a power element used for power converters such as inverters and transformers. The reason is that GaN-based power components can significantly reduce power loss compared to Si power components. Since the dielectric field of the dielectric breakdown is high, the on-resistance can be reduced by the thinning element, thereby reducing the conduction loss.
GaN-based power components also contribute to miniaturization of power converters. The reason is that GaN-based power components can operate at high switching frequencies compared to Si power components, reducing the size of peripheral components. In addition, the cooling mechanism can be reduced due to the high thermal conductivity. In view of the above advantages, manufacturers engaged in servers, hybrid vehicles, and electric vehicles, as well as white goods businesses, are paying close attention to GaN-based power components. It is reported that in 2011, GaN-based power components will be expected to be equipped with server power.
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