Tokyo Metropolitan University (formerly Wushu University of Technology) announced that it has produced silicon light-emitting elements using germanium (Ge) quantum dots, and confirmed the phenomenon of luminescence based on current excitation at room temperature. Due to the compatibility of manufacturing processes in CMOS processes and the desire to achieve laser oscillations, the implementation of silicon photons is a step closer (see our website).
The construction of the component. Basically, the pin structure is arranged, and the quantum dots are arranged on the i layer. It has also confirmed the rectification characteristics as a diode
The development of this light-emitting element is the Silicon Nanoscience Research Center of the Tokyo Metropolitan University Research Institute. In the i-layer of the silicon-based pin structure element, germanium microparticles (quantum dots) having a diameter of several tens to 100 nm are embedded, and the particles "have an effect of increasing the recombination rate between electrons and holes" (silicon nanoscience) Director of the Research Center, Professor of the Tokyo Metropolitan University, Faculty of Engineering, Marunouchi). Maruyama said, "The quantum dots are formed by the MBE (molecular beam epitaxy) method at a temperature of about 400 ° C, so the manufacturing process of the components is compatible with the CMOS process." The active layer portion of the element has a diameter of about 3 μm.
Change in luminescence wavelength and luminescence intensity during current injection
It has been confirmed that the element can emit light having a wavelength of about 1.2 μm by current injection at room temperature (300 K). The internal quantum efficiency of luminescence is 10-2. Maruquan said, "In addition to high quantum efficiency, the component is stable both thermodynamically and chemically. It is more advantageous than existing silicon-based luminescent components."
Comparison with other silicon-based light-emitting components
In addition, this element also tends to increase the injection current and the luminescence intensity greatly. Therefore, Maruyama said, "If a resonator structure is formed by photon crystallization, laser oscillation should occur. In the future, it is planned to change the luminescence wavelength to It can be used for communication in the 1.5μm band. It will be developed as an optical switch after 2 to 3 years, and it will be put into practical use."
The construction of the component. Basically, the pin structure is arranged, and the quantum dots are arranged on the i layer. It has also confirmed the rectification characteristics as a diode The development of this light-emitting element is the Silicon Nanoscience Research Center of the Tokyo Metropolitan University Research Institute. In the i-layer of the silicon-based pin structure element, germanium microparticles (quantum dots) having a diameter of several tens to 100 nm are embedded, and the particles "have an effect of increasing the recombination rate between electrons and holes" (silicon nanoscience) Director of the Research Center, Professor of the Tokyo Metropolitan University, Faculty of Engineering, Marunouchi). Maruyama said, "The quantum dots are formed by the MBE (molecular beam epitaxy) method at a temperature of about 400 ° C, so the manufacturing process of the components is compatible with the CMOS process." The active layer portion of the element has a diameter of about 3 μm.
Change in luminescence wavelength and luminescence intensity during current injection It has been confirmed that the element can emit light having a wavelength of about 1.2 μm by current injection at room temperature (300 K). The internal quantum efficiency of luminescence is 10-2. Maruquan said, "In addition to high quantum efficiency, the component is stable both thermodynamically and chemically. It is more advantageous than existing silicon-based luminescent components."
Comparison with other silicon-based light-emitting components In addition, this element also tends to increase the injection current and the luminescence intensity greatly. Therefore, Maruyama said, "If a resonator structure is formed by photon crystallization, laser oscillation should occur. In the future, it is planned to change the luminescence wavelength to It can be used for communication in the 1.5μm band. It will be developed as an optical switch after 2 to 3 years, and it will be put into practical use."
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